报告摘要：InGaZnO is easy to absorb moisture, thus leading to the formation of metal-hydroxyl (M-OH) defects. The properties and effects of M-OH on the performance of InGaZnO thin-film transistor (TFT) are revealed, also, the methods to improve the performance are investigated by characterizing TFTs with various post-metallization-annealing (PMA) treatments. The formation of M-OH has an adverse influence on the TFT electrical parameters including threshold voltage (V_th), mobility, off-current and sub-threshold swing. M-OH also leads to an abnormal V_th shift under a positive-gate bias stress. Forming-gas annealing is effective to reduce the formation of M-OH due to the passivation effect of H₂ and thus can effectively suppress the adverse influence caused by the M-OH. Moreover, due to its extremely strong passivation ability, the formation of M-OH as well as the effects on the TFT performance can be significantly suppressed by fluorine treatment.

报告人简介：黄晓东，教授、博导，先后入选江苏省双创计划、江苏省六大人才高峰、江苏省青蓝工程中青年学术带头人等，江苏省优秀青年基金资助获得者。研究方向包括：纳电子信息器件与技术、微能源与微系统，近年在IEEE Electron Device Lett.,  IEEE Trans. on Electron Devices,  Applied Physics Letters, Electrochimica ACTA等权威刊物或国际会议上发表论文SCI论文40余篇，授权中国发明专利10余项，主持或参与国家自然科学基金、装备预研基金、江苏省优秀青年基金、国家重点研发计划、国家863计划等科研项目多项。